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*rohs directive 2002/95/ec jan 27 2003 including annex september 2001 - revised february 2005 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp3xxxt3bj overvoltage protector series tisp3070t3bj thru tisp3395t3bj dual bidirectional thyristor overvoltage protectors smb package (top view) device symbol description these dual bidirectional thyristor devices protect central office, access and customer premise equipment against overvoltages o n the telecom line. the tisp3xxxt3bj is available in a wide range of voltages and has an 80 a 10/1000 current rating. these protector s have been specified mindful of the following standards and recommendations: gr-1089-core, tia/eia-is-968, ul 60950, en 60950, iec 60950, itu-t k.20, k.21 and k.45. the TISP3350T3bj meets the fcc part 68 ?b? ringer voltage requirement (v drm = 275 v). housed in a 3-pin modified smb (do-214aa) package, the tisp3xxxt3bj range is space efficient solution for protection designs of 80 a or less which use multiple smbs. these devices allow signal voltages, without clipping, up to the maximum off-state voltage value, v drm , see figure 1. voltages above v drm are limited and will not exceed the breakover voltage, v (bo) , level. if sufficient current flows due to the overvoltage, the device switches into a low-voltage on-state condition, which diverts the current from the overvoltage through the device. when the div erted cur- rent falls below the holding current, i h , level the device switches off and restores normal system operation. how to order dual high current protectors in a space efficient package - 2 x 100 a 10/560 current rating - modified 3-pin smb (do-214aa) package 50 % space saving over two smbs - y configurations with two smb packages 2 x 80 a, 10/1000 . . . .tisp3xxxt3bj + tisp4xxxj1bj 2 x 100 a, 10/700 . . . .tisp3xxxt3bj + tisp4xxxh3bj ion-implanted breakdown region - precise and stable voltage - low voltage overshoot under surge mdxxcja 1 3 2 3 (t or r) sd3taa 1 (t or r) 2 (g) rated for international surge wave shapes wave shape standard i ppsm a 2/10 gr-1089-core 250 8/20 iec 61000-4-5 250 10/160 tia/eia-is-968 (fcc part 68) 150 10/700 itu-t k.20/.21/.45 120 10/560 tia/eia-is-968 (fcc part 68) 100 10/1000 gr-1089-core 80 device v drm v v (bo) v tisp3070t3 58 70 tisp3080t3 65 80 tisp3095t3 75 95 tisp3115t3 90 115 tisp3125t3 100 125 tisp3145t3 120 145 tisp3165t3 135 165 tisp3180t3 145 180 tisp3200t3 155 200 tisp3219t3 180 219 tisp3250t3 190 250 tisp3290t3 220 290 TISP3350T3 275 350 tisp3395t3 320 395 device package carrier tisp3xxxt3bj bj (3-pin modified smb/do-214aa j-bend) r (embossed tape reeled) tisp3xxxt3bjr tisp3xxxt3bjr-s insert xxx value corresponding to protection voltages of 070, 080, 095, 115, etc. for standard termination finish order as for lead free termination finish order as .......................................ul recognized component *rohs compliant versions available
september 2001 - revised february 2005 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. rating symbol value unit repetitive peak off-state voltage, (terminals 1-2 and 3-2) ?070 ?080 ?095 ?115 ?125 ?145 ?165 ?180 ?200 ?219 ?250 ?290 ?350 ?395 v drm 58 65 75 90 100 120 135 145 155 180 190 220 275 320 v non-repetitive peak on-state pulse current (see notes 1 and 2) i ppsm a 2/10 (telcordia gr-1089-core, 2/10 voltage wave shape) 2x250 8/20 (iec 61000-4-5, combinat ion wave generator, 1.2/50 voltage wave shape) 2x250 10/160 (tia/eia-is-968 (replaces fcc part 68), 10/160 s voltage wave shape) 2x150 5/310 (itu-t k.44, 10/700 s voltage wave shape used in k.20/.45/.21) 2x120 5/320 (tia/eia-is-968 (replaces fcc part 68), 9/720 s voltage wave shape) 2x120 10/560 (tia/eia-is-968 (replaces fcc part 68), 10/560 s voltage wave shape) 2x100 10/1000 (telcordia gr-1089-core, 10/1000 voltage wave shape) 2x80 non-repetitive peak on-state current (see notes 1 and 2) i tsm 2x25 2x30 2x1.2 a 50 hz, 1 cycle 60 hz, 1 cycle 1000 s 50 hz/60 hz a.c. initial rate of rise of on-s tate current, line ar current ramp, maximum ramp value < 50 a di t /dt 500 a/ s j unction temperature t j -40 to +150 c storage temperature range t stg -65 to +150 c notes: 1. initially, the device must be in thermal equilibrium with t j =25 c. 2. these non-repetitive rated currents are peak values of either polarity. the rated current values are applied to the terminals 1 and 3 simultaneously (in this case the terminal 2 return current will be the sum of the currents applied to the terminals 1 and 3). the surge may be repeated after the device returns to its initial conditions. tisp3xxxt3bj overvoltage protector series recommended operating conditions absolute maximum ratings, t a = 25 c (unless otherwise noted) component min typ max unit r1, r2 series resistor for gr-1089-core first-level surge survival series resistor for itu-t recommendation k. 20/.45/.21 (coordination with 400 v gdt at 4 kv) series resistor for tia/eia-is-968 (replaces fcc part 68) 9/720 survival series resistor for tia/eia-is-968 (replaces fcc part 68) 10/560 survival series resistor for tia/eia-is-968 (replaces fcc part 68) 10/160 survival 5 6.4 0 0 2.5 ?
september 2001 - revised february 2005 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp3xxxt3bj overvoltage protector series electrical characteristics for the 1 and 2 or the 3 and 2 terminals, t a = 25 c p arameter t est conditions min typ max unit i drm repetitive peak off- st ate current v d = v drm t a = 25 c t a = 85 c 5 10 a v (bo) ac br eakover voltage dv/dt = 250 v/ms, r source =300 ? ?070 ?080 ?095 ?115 ?125 ?145 ?165 ?180 ?200 ?219 ?250 ?290 ?350 ?395 70 80 95 115 125 145 165 180 200 219 250 290 350 395 v v (bo) ramp breakover v oltage dv/dt 1000 v/ s, linear voltage ramp, maximum ramp value = 500 v di/dt = 20 a/ s, linear current ramp, maximum ramp value = 10 a ?070 ?080 ?095 ?115 ?125 ?145 ?165 ?180 ?200 ?219 ?250 ?290 ?350 ?395 81 91 107 128 138 159 179 195 215 234 265 304 361 403 v i (bo) breakover current dv/dt = 250 v/ms, r source =300 ? 800 ma i h holding current i t = 5a, di/dt=+/-30ma/ms 150 ma dv/dt critical rate of rise of off-state voltage linear voltage ramp, maximum ramp value < 0.85v drm 5 kv/ s i d off-state current v d = 50 v t a = 85 c 10 a
september 2001 - revised february 2005 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp3xxxt3bj overvoltage protector series electrical characteristics for the 1 and 2 or the 3 and 2 terminals, t a = 25 c (continued) c off off-state capacitance f=1mhz, vd=1v rms, v d =0, ?070 thru ?095 ?115 thru ?219 ?250 thru ?395 95 69 51 90 63 46 83 59 42 43 29 20 16 114 83 62 108 76 55 100 70 51 51 35 24 19 pf f=1mhz, vd=1v rms, v d =-1v ?070 thru ?095 ?115 thru ?219 ?250 thru ?395 f=1mhz, vd=1v rms, v d =-2v ?070 thru ?095 ?115 thru ?219 ?250 thru ?395 f=1mhz, vd=1v rms, v d =-50v ?070 thru ?095 ?115 thru ?219 ?250 thru ?395 f=1mhz, vd=1v rms, v d = -100 v (see note 3) ?250 thru ?395 note 3: these capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. the unmeasured third terminal is connected to the guard terminal of the bridge. p arameter t est conditions min typ max unit thermal characteristics p arameter test conditions min typ max unit r ja j unction to free air thermal resistance eia/jesd51-3 pcb, i t = i tsm(1000) , t a = 25 c, (see note 4) 90 c/w note 4: eia/jesd51-2 environment and pcb has standard footprint dimensions connected with 5 a rated printed wiring track widths.
september 2001 - revised february 2005 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp3xxxt3bj overvoltage protector series parameter measurement information figure 1. voltage-current characteristic for terminal pairs 1-2 and 3-2 all measurements are referenced to terminal 2 -v v drm i drm v d i h i t v t i tsm i ppsm v (bo) i d quadrant i i switching characteristic quadrant iii switching characteristic +v +i v (bo) v d i d i h i t v t i tsm i ppsm -i pm4xae v drm i drm
september 2001 - revised february 2005 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp3xxxt3bj overvoltage protector series t ypical characteristics figure 2. figure 3. figure 4. figure 5. off-state current vs junction temperature t j - junction temperature - c j unction temperature - c j unction temperature - c -25 0 25 50 75 100 125 150 |i d | - of f-state current - a 0?01 0?1 0? 1 10 tc4ah3aa v d = 50 v normalized breakover voltage vs junction temperature t j - -25 0 25 50 75 100 125 150 normalized breakover voltage 0.90 0.95 1.00 1.05 1.10 1.15 tc4ah3ab '3250 thru '3395 '307 0 thru '3095 '311 5 thru '3219 on-state current vs on-state voltag e v t - on-state voltage - v 0.7 1.5 2 3 4 5 7 15 20 110 i t - on-state current - a 1.5 2 3 4 5 7 15 20 30 40 50 70 150 200 1 10 100 t a = 25 c t w = 100 s tc3t3aa normalized holding current vs junction temperature t j - -25 0 25 50 75 100 125 150 normalized holding current 0.4 0.5 0.6 0.7 0.8 0.9 1.5 2.0 1.0 tc4ah3ac
september 2001 - revised february 2005 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp3xxxt3bj overvoltage protector series t ypical characteristics figure 6. figure 7. capacitance vs off-state volta ge v d - off-state voltage - v 0.5 1 2 3 5 10 20 30 50 100150 c off ?off-state capacitance ?pf 15 20 30 40 50 60 70 80 90 10 tc4ah3ad t j = 25 c v d = 1 v rms '3250 thru '3395 '3115 thru '3219 '3070 thru '3095 off-state capacitance vs ra ted repetitive peak off-state voltage v drm - repetivive peak off-state voltage - v 50 60 70 80 90 150 200 250 300 350 100 c off - off-state capacitance - pf 30 40 50 60 70 80 tc4ah3af v d = 2 v
september 2001 - revised february 2005 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp3xxxt3bj overvoltage protector series rating and thermal information figure 8. figure 9. non-repetitive peak on-state current vs c urrent duration t - current duration - s 0? 1 10 100 1000 i tsm (t) - non-repetivive peak on-state current - a 1.5 2 3 4 5 6 7 8 9 15 20 1 10 ti3taa v gen = 600 v rms, 50/60 hz r gen = 1. 4*v gen /i tsm(t) eia/jesd51-2 environment eia/jesd51-3 pcb, t a = 25 c simultaneous operation of r and t terminals. g terminal current = 2xi tsm(t) v drm derating factor vs minimum ambient temperature t amin - minimu m ambient temperature - c -35 -25 -15 -5 5 15 25 -40 -30 -20 -10 0 10 20 derating factor 0.92 0.93 0.94 0.95 0.96 0.97 0.98 0.99 1.00 ti4ah3ab '3250 thru '3395 '3070 thru '3095 '3115 thru '3219
september 2001 - revised february 2005 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. smb03 pad size md3bjaaa 2.80 (.110) 1.75 (.069) dimensions are: millimeters (inches) 1.75 (.069) 1.00 (.039) 0.80 (.032) 2.50 (.099) tisp3xxxt3bj overvoltage protector series carrier information mechanical data recommended printed wiring land pattern dimensions device symbolization code devices will be coded as below. for production quantities, the carrier will be embossed tape reel pack. evaluation quantities may be shipped in bulk pack or em bossed tape. device sy m bolization code tisp3070t3 3070t3 tisp3080t3 3080t3 tisp3095t3 3095t3 tisp3115t3 3115t3 tisp3125t3 3125t3 tisp3145t3 3145t3 tisp3165t3 3165t3 tisp3180t3 3180t3 tisp3200t3 3200t3 tisp3219t3 3219t3 tisp3250t3 3250t3 tisp3290t3 3290t3 TISP3350T3 3350t3 tisp3395t3 3395t3 pa ck ag ec arrier standard quantity smb embossed tape reel pack 3000
september 2001 - revised february 2005 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. mechanical data tisp3xxxt3bj overvoltage protector series modified smb (do-214aa) plastic surface mount triode package this surface mount package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. the compou nd will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated i n high humidity conditions. leads require no additional cleaning or processing when used in soldered assembly. smb03 mdxxcia 1 3 2 4.06 - 4.57 (.160 - .180) 3.30 - 3.94 (.130 - .155) 0.76 - 1.52 (.030 - .060) 5.21 - 5.59 (.205 - .220) 1.90 - 2.10 (.075 - .083) 0.10 - 0.20 (.004 - .008) 1.42 - 1.57 (.056 - .062) 0.56 - 0.71 (.022 - .028) 0.79 - 0.94 (.031 - .037) 2.00 - 2.40 (.079 - .094) dimensions are: millimeters (inches)
september 2001 - revised february 2005 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. mechanical data tisp3xxxt3bj overvoltage protector series t ape dimensions direction of feed carrier tape embossment cover t ape maximum component rota tion ty pical component cavity center line ty pical component center line notes: a. the cleara nce between the component and the cavity must be within 0.05 mm (.002 in) min. to 0.65 mm (.026 in) max. so that the component cannot rotate more than 20 within the determined cavity. b. tape d devices are supplied on a reel of the following dimensions:- reel diameter: 330 mm 3.0 mm (12.99 in .118 in) reel hub diameter 75 mm (2.95 in) min. reel axial hole: 13.0 mm 0.5 mm (.512 in .020 in) c. 3000 devices are on a reel. md3bjab smb03 package single-sprocket tape e 3.90 - 4.10 (.154 - .161) 1.50 (.059) min. ? 0.40 (.016) max. 8.20 (.323) max. 4.50 (.177) max. 1.55 - 1.65 (.061 - .065) ? 1.65 - 1.85 (.065 - .073) 7.90 - 8.10 (.311 - .319) 0 min. 20 11.70 - 12.30 (.461 - .484) 5.45 - 5.55 (.215 - .219) 1.95 - 2.05 (.077 - .081) dimensions are: millimeters (inches) ?isp?is a trademark of bourns, ltd., a bourns company, and is registered in u.s. patent and trademark office. ?ourns?is a registered trademark of bourns, inc. in the u.s. and other countries.

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